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| Alternate Source/ Second Source Photodiodes VTD34F (BPW34F INDUSTRY EQUIVALENT) PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light but passes infrared. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. The photodiodes are designed to provide excellent sensitivity at low levels of irradiance. CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20C to 80C -20C to 80C ELECTRO-OPTICAL CHARACTERISTICS @ 25C VTD34F SYMBOL Re VOC TC VOC ID CJ tR/tF SR range p VBR 1/2 NEP D* CHARACTERISTIC Responsivity Open Circuit Voltage VOC Temperature Coefficient Dark Current Junction Capacitance Rise/Fall Time @ 1 k Lead Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp.-50% Resp. Pt. Noise Equivalent Power Specific Detectivity 40 50 4.8 x 10-14 5.7 x 1012 TEST CONDITIONS Min. 0.5 mW/cm2, 940 nm 0.5 mW/cm2, 940 2850 K H = 0, VR = 10 V @ 1 MHz, VR = 0 V VR = 10 V, 833 nm @ Peak 725 940 nm 15 275 350 -2.0 2 60 50 0.60 1150 30 Typ. Max. A mV mV/C nA pF nsec A/W nm nm V Degrees W Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 74 |
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